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Point Source Infrared Emitting Diode
OP230WPS
Absolute Maximum Ratings
T A = 25 o C unless otherwise noted
Storage Temperature
Operating Temperature
Lead Soldering Temperature (1/16” (1.6mm) from case for 5 seconds with soldering iron)
Forward Current
Peak Forward current (2 μs pulse width, 0.1% Duty Cycle)
Reverse DC Voltage
-55° C to +150° C
-40° C to +125° C
260 ° C (2)
100 mA
3.0 A
2.0 V
Power Dissipation
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
100 mW
(3)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
CONDITIONS
E e(APT)
Apertured Irradiance
0.50
mW/cm 2 I F = 100 mA (4)
V F
I R
λ P
β
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth @50% I F =20mA
850
25
2.2
10
V
μ A
nm
nm
I F = 100 mA
V R = 2.5 V
I F = 20 mA
I F = 20 mA
θ HP
Emission Angle at Half Power
±45
Degrees I F = 20 mA
t r
t f
Optical Rise Time
Optical Fall Time
20
20
ns
ns
I F(Peak) = 100 mA,
Pulse Width=10μs,
Duty Cycle=10%
Notes:
(1)
(2)
(3)
(4)
All parameters tested using pulse technique.
RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
Derate at 1mW/ ° C above 25 ° C.
E e(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and
perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). E e(APT) is not nec-
essarily uniform within the measured area.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 09.05
Page 2 of 3
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